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| TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 20 11 44 1.9 Unit V V V A JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation W 1.0 W Weight: 0.08 g (typ.) 157 11 0.19 150 -55 to 150 mJ A mJ C C Circuit Configuration 8 7 6 5 Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 4 1 2004-07-06 TPC8014 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 C/W Marking (Note 5) TPC8014 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 11 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPC8014 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd VDD 24 V, VGS = 10 V, ID = 11 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 ID = 5.5 A VOUT RL = 2.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VDS = 10 V, ID = 5.5 A Min 30 15 1.3 5 Typ. 15 11 10 1860 270 320 9 19 20 69 39 4 9 Max 10 10 2.5 22 14 ns nC pF Unit A A V V m S VDD 15 V - Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 11 A, VGS = 0 V Min Typ. Max 44 -1.2 Unit A V 3 2004-07-06 TPC8014 ID - VDS 20 3.4 3.5 4 6 8 10 3.3 3.2 10 10 3.2 8 6 84 ID - VDS 3.1 16 3.3 3.0 (A) (A) 3. 6 3.4 ID 12 ID 3.1 Drain current 3.0 8 2.9 2.8 4 2.7 VGS = 2.6 V 1 2 3 4 5 Drain current 2.9 4 2.8 2.7 2.6 2 0 0 0 0 VGS = 2.5 V 0.2 0.4 0.6 0.8 1.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 10 V Pulse test 1 VDS - VGS Common source Ta = 25C Pulse test (V) VDS 100 16 0.8 ID (A) Drain-source voltage 12 0.6 Drain current 8 Ta = -55C 25 4 0.4 2.5 0.2 5.5 ID = 11A 0 0 0.5 1 1.5 2 2.5 3 2.5 4 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 RDS (ON) - ID Common source Ta = 25C Pulse test Forward transfer admittance Yfs (S) Drain-source ON resistance RDS (ON) (m) -55C Tc = 100C 30 VGE = 4.5 V 10 VGS = 10 V 25C 3 Common source VDS = 10 V Pulse test 0.1 1 10 100 1 1 3 10 30 100 Drain current ID (A) Drain current ID (A) 4 2004-07-06 TPC8014 RDS (ON) - Ta () 25 ID = 11, 5.5, 2.5 A 100 IDR - VDS 5 Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) () 20 10 10 3 1 VGS = 10 V 15 VGS = 4.5 V 10 ID = 11, 5.5, 2.5 A 1 10 5 Common source Pulse test 0 -80 -40 0 40 80 120 160 0.1 0 Common source Ta = 25C Pulse test 0.2 0.4 0.6 0.8 1 1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 3 Vth - Ta (V) (pF) 1000 2.5 Vth Gate threshold voltage Ciss 2 Capacitance C Coss Crss 100 Common source VGS = 10 V ID = 1 mA Pulse test 10 0.1 1 10 100 1.5 1 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 0 -80 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2 (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) Dynamic input/output characteristics 30 Common source Ta = 25C ID = 11 A VDD = 24 V VDS 15 12 12 6 5 VDD = 24 V 5 6 15 Pulse test 20 30 (W) (V) 1.6 Drain power dissipation Drain-source voltage (2) 0.8 10 10 0.4 0 0 50 100 150 200 0 0 10 20 30 40 50 0 60 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2004-07-06 Gate-source voltage 1.2 t = 10 s 20 VGS (V) 25 25 PD VDS TPC8014 rth - tw 1000 (1) (2) Device mounted on a glass-epoxy board (a) (Note 2a) Device mounted on a glass-epoxy board (b) (Note 2b) Normalized transient thermal impedance rth (C/W) (2) t = 10 s 100 (1) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area 100 1 ms* ID max (pluse) * 10 (A) 10 ms* Drain current ID 1 0.1 0.01 0.01 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2004-07-06 |
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